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Infineon IMZC120 Type N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1

RS Stock No.:: 351-927
Mfr. Part No.:: IMZC120R026M2HXKSA1
Brand:: Infineon

Infineon IMZC120 Type N-Channel MOSFET, 49 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1

Bulk discount available

Subtotal (1 unit)*

£15.08

(exc. VAT)

£18.10

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

240 unit(s) shipping from 29 December 2025

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Units	Per unit
1 - 9	£15.08
10 - 99	£13.57
100 +	£12.52

*price indicative

RS Stock No.:: 351-927
Mfr. Part No.:: IMZC120R026M2HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	PG-TO-247-4-U07
	Series	IMZC120
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	69mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	5.5V
	Typical Gate Charge Qg @ Vgs	60nC
	Maximum Power Dissipation Pd	289W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	200°C
	Width	16 mm
	Standards/Approvals	JEDEC47/20/22
	Length	23.5mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 1200V
	Package Type PG-TO-247-4-U07
	Series IMZC120
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 69mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 5.5V
	Typical Gate Charge Qg @ Vgs 60nC
	Maximum Power Dissipation Pd 289W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 200°C
	Width 16 mm
	Standards/Approvals JEDEC47/20/22
	Length 23.5mm
	Automotive Standard No

Datasheet - IMZC120R026M2HXKSA1

The Infineon CoolSiC MOSFET discrete 1200 V, 26 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Short circuit withstand time 2 μs

Benchmark gate threshold voltage 4.2 V

Robust against parasitic turn on

Very low switching losses

Tighter VGS(th) parameter distribution