Infineon IMZC120 SiC N-Channel MOSFET, 69 A, 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R026M2HXKSA1

Bulk discount available

Subtotal (1 unit)*

£15.08

(exc. VAT)

£18.10

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£15.08
10 - 99£13.57
100 +£12.52

*price indicative

RS Stock No.:
351-927
Mfr. Part No.:
IMZC120R026M2HXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

1200 V

Package Type

PG-TO247-4-U07

Series

IMZC120

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon CoolSiC MOSFET discrete 1200 V, 26 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Short circuit withstand time 2 μs
Benchmark gate threshold voltage 4.2 V
Robust against parasitic turn on
Very low switching losses
Tighter VGS(th) parameter distribution

Related links