Infineon IPT0 N-Channel MOSFET, 243 A, 100 V, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1
- RS Stock No.:
- 351-908
- Mfr. Part No.:
- IPT023N10NM5LF2ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 351-908
- Mfr. Part No.:
- IPT023N10NM5LF2ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 243 A | |
Maximum Drain Source Voltage | 100 V | |
Series | IPT0 | |
Package Type | PG-HSOF-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 243 A | ||
Maximum Drain Source Voltage 100 V | ||
Series IPT0 | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- AT
The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
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