Infineon IPT0 N-Channel MOSFET, 321 A, 100 V, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1
- RS Stock No.:
- 351-906
- Mfr. Part No.:
- IPT017N10NM5LF2ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 351-906
- Mfr. Part No.:
- IPT017N10NM5LF2ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 321 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT0 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 321 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-HSOF-8 | ||
Series IPT0 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
The Infineon Infineon’s best-in-class OptiMOS 5 Linear FET 2 100 V in TO-Leadless (TOLL), offering the industry’s lowest RDS(on) and wide SOA at 25˚C. The combination of the OptiMOS 5 Linear FET 2 technology and the TOLL package, It is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
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