Microchip TP0610T Silicon P-Channel MOSFET, 120 mA, 60 V, 3-Pin SOT-23 TP0610T-G

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£3,120.00

(exc. VAT)

£3,750.00

(inc. VAT)

Add to Basket
Select or type quantity
New product - Preorder today
  • Shipping from 14 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£1.04£3,120.00

*price indicative

RS Stock No.:
333-219
Mfr. Part No.:
TP0610T-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

P

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

TP0610T

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage

Related links