STMicroelectronics SCT0 Silicon MOSFET, 90 A, 1200 V HU3PAK SCT019H120G3AG
- RS Stock No.:
- 330-318
- Mfr. Part No.:
- SCT019H120G3AG
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
£26.84
(exc. VAT)
£32.21
(inc. VAT)
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- Shipping from 29 June 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £26.84 |
| 10 - 99 | £24.15 |
| 100 + | £22.28 |
*price indicative
- RS Stock No.:
- 330-318
- Mfr. Part No.:
- SCT019H120G3AG
- Brand:
- STMicroelectronics
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | HU3PAK | |
| Series | SCT0 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HU3PAK | ||
Series SCT0 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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