Infineon OptiMOS SiC N-Channel MOSFET, 310 A, 120 V, 8-Pin PG-HSOG-8-1 IAUTN12S5N018GATMA1
- RS Stock No.:
- 284-708
- Mfr. Part No.:
- IAUTN12S5N018GATMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-708
- Mfr. Part No.:
- IAUTN12S5N018GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 310 A | |
Maximum Drain Source Voltage | 120 V | |
Series | OptiMOS | |
Package Type | PG-HSOG-8-1 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Transistor Material | SiC | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 310 A | ||
Maximum Drain Source Voltage 120 V | ||
Series OptiMOS | ||
Package Type PG-HSOG-8-1 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 5 automotive power MOSFET is designed specifically for automotive applications, ensuring outstanding performance and reliability. With its robust N channel enhancement mode configuration, this MOSFET excels in demanding conditions, offering extended qualifications that surpass industry standards. It effectively operates at temperatures up to 175°C and undergoes enhanced electrical testing, making it a vital component for innovative automotive designs. The device is optimised for minimal reverse recovery charge, which translates to higher efficiency and reduced energy loss in your applications. This combination of high durability and top tier performance establishes it as an essential choice for automotive engineers seeking reliable solutions for their designs.
Optimised for high reliability in automotive
Excellent thermal performance up to 175°C
Low on state resistance for energy efficiency
Avalanche rated for overcurrent protection
RoHS compliant for environmental standards
Robust design for high pulse currents
100% avalanche tested for quality assurance
Excellent thermal performance up to 175°C
Low on state resistance for energy efficiency
Avalanche rated for overcurrent protection
RoHS compliant for environmental standards
Robust design for high pulse currents
100% avalanche tested for quality assurance
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