Infineon OptiMOS SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 IPP018N10N5XKSA1
- RS Stock No.:
- 284-684
- Mfr. Part No.:
- IPP018N10N5XKSA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 284-684
- Mfr. Part No.:
- IPP018N10N5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 205 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PG-TO220-3 | |
| Series | OptiMOS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 205 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-TO220-3 | ||
Series OptiMOS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET with OptiMOS 5 Power Transistor revolutionises efficiency in high frequency applications, delivering exceptional performance without compromise. Designed specifically for demanding industrial environments, this N channel MOSFET excels in power management and thermal stability. With a robust on resistance and an impressive maximum operating temperature of 175°C, it effectively handles substantial loads, making it an ideal choice for various applications. Its advanced features ensure optimal switching performance, significantly enhancing the overall reliability of your electronics.
Optimised for high frequency switching
N channel design boosts power efficiency
Low on resistance ensures superior performance
Durable structure withstands extreme temperatures
Pb free and RoHS compliant for safety
Qualified for industrial applications per JEDEC
N channel design boosts power efficiency
Low on resistance ensures superior performance
Durable structure withstands extreme temperatures
Pb free and RoHS compliant for safety
Qualified for industrial applications per JEDEC
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO220-3 IPP018N10N5XKSA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO220-3 IPP018N10N5AKSA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO263-3 IPB018N10N5ATMA1
- Infineon IPP N-Channel MOSFET 600 V, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP N-Channel MOSFET 200 V, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- Infineon IPA N-Channel MOSFET 600 V, 3-Pin PG-TO220-3 IPAN60R180CM8XKSA1
- Infineon IPP N-Channel MOSFET 600 V, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- Infineon IPP N-Channel MOSFET 135 V, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1