Infineon OptiMOS SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 IPP018N10N5AKSA1
- RS Stock No.:
- 284-887
- Mfr. Part No.:
- IPP018N10N5AKSA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 284-887
- Mfr. Part No.:
- IPP018N10N5AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 205 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS | |
| Package Type | PG-TO220-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 205 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS | ||
Package Type PG-TO220-3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET features is designed to deliver exceptional efficiency and reliability, catering to a wide array of applications. With its innovative structure, it facilitates high speed switching while ensuring low conduction losses, making it an ideal choice for power management systems and industrial applications. The product stands out for its premium thermal performance, allowing it to operate effectively under high load conditions. It is engineered to provide optimal power density, ensuring that space constraints within systems do not compromise performance. Whether used in automotive solutions or renewable energy technology, this MOSFET represents a robust solution that meets the demands of modern electronic design.
High speed switching capabilities
Low conduction losses enhance efficiency
Optimised for superior thermal performance
Robust operation under high load conditions
Supports compact power density needs
Versatile for automotive and renewable energy
Low conduction losses enhance efficiency
Optimised for superior thermal performance
Robust operation under high load conditions
Supports compact power density needs
Versatile for automotive and renewable energy
Related links
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO220-3 IPP018N10N5AKSA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO220-3 IPP018N10N5XKSA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 3-Pin PG-TO263-3 IPB018N10N5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 40 V, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 16-Pin PG-HDSOP-16 IPTC007N06NM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1