IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.66mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.15mm