IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
- RS Stock No.:
- 168-4482
- Mfr. Part No.:
- IXFP10N80P
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 168-4482
- Mfr. Part No.:
- IXFP10N80P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | IXYS | |
Channel Type | N | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 800 V | |
Series | HiperFET, Polar | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.1 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5.5V | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 10.66mm | |
Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
Transistor Material | Si | |
Width | 4.83mm | |
Height | 9.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 800 V | ||
Series HiperFET, Polar | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.66mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.83mm | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
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