STMicroelectronics SuperMESH Type N-Channel MOSFET, 17 A, 500 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 151-443
- Mfr. Part No.:
- STP20NK50Z
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£18.65
(exc. VAT)
£22.40
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 3,505 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £3.73 | £18.65 |
*price indicative
- RS Stock No.:
- 151-443
- Mfr. Part No.:
- STP20NK50Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | SuperMESH | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 119nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series SuperMESH | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 119nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
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