Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
- RS Stock No.:
- 134-295
- Mfr. Part No.:
- PMV65XP,215
- Brand:
- Nexperia
Save 55% when you buy 1500 units
Subtotal (1 pack of 50 units)*
£14.00
(exc. VAT)
£17.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 800 unit(s) ready to ship
- Plus 100 unit(s) ready to ship from another location
- Plus 200 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 550 | £0.28 | £14.00 |
| 600 - 1450 | £0.15 | £7.50 |
| 1500 + | £0.126 | £6.30 |
*price indicative
- RS Stock No.:
- 134-295
- Mfr. Part No.:
- PMV65XP,215
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 76 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.47V | |
| Maximum Power Dissipation | 1.92 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 7.6 nC @ 4.5 V | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 76 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.47V | ||
Maximum Power Dissipation 1.92 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Typical Gate Charge @ Vgs 7.6 nC @ 4.5 V | ||
Width 1.4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||