Infineon IGB10N60TATMA1, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

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Subtotal (1 pack of 20 units)*

£14.78

(exc. VAT)

£17.74

(inc. VAT)

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Temporarily out of stock
  • 600 unit(s) shipping from 23 February 2026
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Units
Per unit
Per Pack*
20 - 180£0.739£14.78
200 - 480£0.534£10.68
500 - 980£0.47£9.40
1000 - 1980£0.442£8.84
2000 +£0.431£8.62

*price indicative

Packaging Options:
RS Stock No.:
826-9055
Mfr. Part No.:
IGB10N60TATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

20A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

110W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

TrenchStop

Standards/Approvals

JEDEC

Automotive Standard

No

RoHS Status: Not Applicable

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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