Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 805-1753
- Mfr. Part No.:
- NGB8207ABNT4G
- Brand:
- Littelfuse
Subtotal (1 pack of 5 units)*
£8.32
(exc. VAT)
£9.985
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 225 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.664 | £8.32 |
*price indicative
- RS Stock No.:
- 805-1753
- Mfr. Part No.:
- NGB8207ABNT4G
- Brand:
- Littelfuse
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 365 V | |
| Maximum Gate Emitter Voltage | ±15V | |
| Maximum Power Dissipation | 165 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.29 x 9.65 x 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Littelfuse | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 365 V | ||
Maximum Gate Emitter Voltage ±15V | ||
Maximum Power Dissipation 165 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.29 x 9.65 x 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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