STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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Subtotal (1 reel of 1000 units)*

£733.00

(exc. VAT)

£880.00

(inc. VAT)

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1000 +£0.733£733.00

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RS Stock No.:
168-7156
Mfr. Part No.:
STGB10NC60HDT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

65 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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