Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.:: 165-5613
Mfr. Part No.:: IGB10N60TATMA1
Brand:: Infineon

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

5740 In stock - FREE next working day delivery available

Price Each (On a Reel of 1000)

£0.532

(exc. VAT)

£0.638

(inc. VAT)

Units	Per unit	Per Reel*
1000 +	£0.532	£532.00

*price indicative

RS Stock No.:: 165-5613
Mfr. Part No.:: IGB10N60TATMA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

COO (Country of Origin):: CN

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	10 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	110 W
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	10.31 x 9.45 x 4.57mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C