Infineon IKB10N60TATMA1 IGBT, 24 A 600 V TO-263
- RS Stock No.:
- 258-7725
- Mfr. Part No.:
- IKB10N60TATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.55
(exc. VAT)
£9.05
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.51 | £7.55 |
| 25 - 45 | £1.36 | £6.80 |
| 50 - 120 | £1.284 | £6.42 |
| 125 - 245 | £1.192 | £5.96 |
| 250 + | £1.104 | £5.52 |
*price indicative
- RS Stock No.:
- 258-7725
- Mfr. Part No.:
- IKB10N60TATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 24A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-263 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TRENCHSTOPTM | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 24A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-263 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TRENCHSTOPTM | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
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