Infineon IGP10N60TXKSA1 IGBT, 24 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 258-0985
- Mfr. Part No.:
- IGP10N60TXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.44
(exc. VAT)
£2.92
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.22 | £2.44 |
| 20 - 48 | £1.10 | £2.20 |
| 50 - 98 | £1.025 | £2.05 |
| 100 - 198 | £0.955 | £1.91 |
| 200 + | £0.89 | £1.78 |
*price indicative
- RS Stock No.:
- 258-0985
- Mfr. Part No.:
- IGP10N60TXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 24A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 29.95mm | |
| Series | TRENCHSTOPTM | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 24A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 29.95mm | ||
Series TRENCHSTOPTM | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
The Infineon Hard-switching 600 V, 10 A single TRENCHSTOP IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Related links
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