Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
- RS Stock No.:
- 258-7063
- Mfr. Part No.:
- IKB10N60TATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£513.00
(exc. VAT)
£616.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £0.513 | £513.00 |
*price indicative
- RS Stock No.:
- 258-7063
- Mfr. Part No.:
- IKB10N60TATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 110 W | |
| Package Type | TO-263-3 | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 110 W | ||
Package Type TO-263-3 | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
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