STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole
- RS Stock No.:
- 234-8894
- Mfr. Part No.:
- STGYA75H120DF2
- Brand:
- STMicroelectronics
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Units | Per unit |
|---|---|
| 1 - 4 | £6.59 |
| 5 - 9 | £6.26 |
| 10 - 24 | £5.63 |
| 25 - 49 | £5.26 |
| 50 + | £5.13 |
*price indicative
- RS Stock No.:
- 234-8894
- Mfr. Part No.:
- STGYA75H120DF2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 150A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 750W | |
| Package Type | Max247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 150A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 750W | ||
Package Type Max247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
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