STMicroelectronics STGYA75H120DF2 IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole
- RS Stock No.:
- 234-8894
- Mfr. Part No.:
- STGYA75H120DF2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£7.64
(exc. VAT)
£9.17
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 460 unit(s) ready to ship
- Plus 999,999,539 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 4 | £7.64 |
5 - 9 | £7.26 |
10 - 24 | £6.53 |
25 - 49 | £6.10 |
50 + | £5.95 |
*price indicative
- RS Stock No.:
- 234-8894
- Mfr. Part No.:
- STGYA75H120DF2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 150 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 750 W | |
Package Type | Max247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 750 W | ||
Package Type Max247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
Related links
- STMicroelectronics STGYA75H120DF2 IGBT 3-Pin Max247, Through Hole
- onsemi FGY75T120SWD Single IGBT 3-Pin TO247-3LD, Through Hole
- Infineon IKQ75N120CT2XKSA1 150 A 1200 V Through Hole
- Infineon IKQ75N120CS6XKSA1 Single IGBT 3-Pin PG-TO247
- Infineon FS150R12N3T7BPSA1 IGBT, 150 A 1200 V
- Infineon FP150R12N3T7PB11BPSA1 IGBT, 150 A 1200 V
- Infineon FP150R12N3T7B11BPSA1 IGBT, 150 A 1200 V
- Infineon FS150R12N2T7B54BPSA1 IGBT, 150 A 1200 V