Infineon, Type N-Channel IGBT Single Transistor IC, 150 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 226-6110
- Mfr. Part No.:
- IKQ75N120CS6XKSA1
- Brand:
- Infineon
Subtotal (1 tube of 30 units)*
£155.28
(exc. VAT)
£186.33
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 750 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £5.176 | £155.28 |
*price indicative
- RS Stock No.:
- 226-6110
- Mfr. Part No.:
- IKQ75N120CS6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 150A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 880W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 31ns | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 150A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 880W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 31ns | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon 5 A IGBT with anti-parallel diode is Very soft, fast recovery anti-parallel diode and has high ruggedness, temperature stable behaviour. It used low gate charge.
Low EMI
Low Gate Charge QG
Low saturation voltage if 1.85 V combined with low switching losses
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