Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

£14.30

(exc. VAT)

£17.15

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5£2.86£14.30
10 - 20£2.576£12.88
25 - 45£2.402£12.01
50 - 120£2.23£11.15
125 +£2.06£10.30

*price indicative

Packaging Options:
RS Stock No.:
215-6673
Distrelec Article No.:
304-31-965
Mfr. Part No.:
IKW30N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

55A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Length

42mm

Height

5.21mm

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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