Infineon, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6671
- Mfr. Part No.:
- IKW30N65H5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£48.60
(exc. VAT)
£58.20
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £1.62 | £48.60 |
| 60 - 120 | £1.539 | £46.17 |
| 150 + | £1.474 | £44.22 |
*price indicative
- RS Stock No.:
- 215-6671
- Mfr. Part No.:
- IKW30N65H5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 55A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Length | 42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 55A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC | ||
Length 42mm | ||
Automotive Standard No | ||
The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference