STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4
- RS Stock No.:
- 212-2107
- Mfr. Part No.:
- STGW100H65FB2-4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)*
£11.93
(exc. VAT)
£14.316
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 568 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £5.965 | £11.93 |
| 10 + | £5.14 | £10.28 |
*price indicative
- RS Stock No.:
- 212-2107
- Mfr. Part No.:
- STGW100H65FB2-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 145 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 441 W | |
| Number of Transistors | 1 | |
| Package Type | TO247-4 | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 145 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 441 W | ||
Number of Transistors 1 | ||
Package Type TO247-4 | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
IGBT
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Related links
- STMicroelectronics STGW100H65FB2-4 IGBT 4-Pin TO247-4
- Infineon IKZA40N65EH7XKSA1 Single Collector Single Gate IGBT 4-Pin PG-TO247-4-STD-NT3.7,
- STMicroelectronics STGWA100H65DFB2 IGBT 3-Pin TO-247
- onsemi NTH SiC N-Channel MOSFET 1200 V, 4-Pin TO247-4L NTH4L013N120M3S
- Infineon IKZ50N65EH5XKSA1 IGBT 4-Pin PG-TO247-4
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1
- Infineon IKZA50N65EH7XKSA1 Single Collector Single Gate IGBT 4-Pin PG-TO247-4-STD-NT3.7,
