STMicroelectronics STGW100H65FB2-4, Type N-Channel IGBT, 145 A 650 V, 4-Pin TO-247-4, Through Hole

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£11.93

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£14.316

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2 - 8£5.965£11.93
10 +£5.14£10.28

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Packaging Options:
RS Stock No.:
212-2107
Mfr. Part No.:
STGW100H65FB2-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

145A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

441W

Package Type

TO-247-4

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

5.1mm

Length

15.9mm

Series

STG

Standards/Approvals

RoHS

Automotive Standard

No

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

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