STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4
- RS Stock No.:
- 212-2106
- Mfr. Part No.:
- STGW100H65FB2-4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£136.92
(exc. VAT)
£164.31
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 540 unit(s) ready to ship
- Plus 999,999,450 unit(s) shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | £4.564 | £136.92 |
| 120 - 480 | £4.444 | £133.32 |
| 510 - 990 | £4.33 | £129.90 |
| 1020 + | £4.222 | £126.66 |
*price indicative
- RS Stock No.:
- 212-2106
- Mfr. Part No.:
- STGW100H65FB2-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 145 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 441 W | |
| Package Type | TO247-4 | |
| Channel Type | N | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 145 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 441 W | ||
Package Type TO247-4 | ||
Channel Type N | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
IGBT
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
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