MPN

Vishay Single 1 Type N-Channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 IRLL014TRPBF

RS Stock No.:: 180-8823
Mfr. Part No.:: IRLL014TRPBF
Brand:: Vishay

Vishay Single 1 Type N-Channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 IRLL014TRPBF

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Subtotal (1 pack of 10 units)*

£5.82

(exc. VAT)

£6.98

(inc. VAT)

FREE delivery for orders over £60.00

Temporarily out of stock

Shipping from 22 January 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.582	£5.82
100 - 240	£0.553	£5.53
250 - 490	£0.466	£4.66
500 - 990	£0.379	£3.79
1000 +	£0.32	£3.20

*price indicative

RS Stock No.:: 180-8823
Mfr. Part No.:: IRLL014TRPBF
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.2Ω
	Typical Gate Charge Qg @ Vgs	8.4nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.1W
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Height	1.8mm
	Standards/Approvals	No
	Length	6.3mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.2Ω
	Typical Gate Charge Qg @ Vgs 8.4nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.1W
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Height 1.8mm
	Standards/Approvals No
	Length 6.3mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is an N-channel, SOT-223-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 10V. It has a drain-source resistance of 200mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 3.1W. It has a minimum and maximum driving voltage of 4V and 5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Available in tape and reel

• Dynamic dV/dt rating

• Ease of paralleling

• Fast switching

• Halogen and lead (Pb) free component

• Logic-level gate drive

• Operating temperature ranges between -55°C and 150°C

• RDS (on) specified at VGS is 4V and 5V

Applications

• Battery chargers

• Inverters

• Power supplies

• Switching mode power supply (SMPS)

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