STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 tube of 50 units)*

£50.30

(exc. VAT)

£60.35

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 50 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£1.006£50.30
100 - 200£0.98£49.00
250 +£0.956£47.80

*price indicative

RS Stock No.:
168-8877
Mfr. Part No.:
STGF10NB60SD
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

23 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 20mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Gate Capacitance

610pF

Energy Rating

8mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links