STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP
- RS Stock No.:
- 204-9872
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
£8.29
(exc. VAT)
£9.95
(inc. VAT)
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In Stock
- 145 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
5 - 5 | £1.658 | £8.29 |
10 - 20 | £1.404 | £7.02 |
25 + | £1.378 | £6.89 |
*price indicative
- RS Stock No.:
- 204-9872
- Mfr. Part No.:
- STGF20H65DFB2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 40 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 45 W | |
Number of Transistors | 1 | |
Package Type | TO-220FP | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 45 W | ||
Number of Transistors 1 | ||
Package Type TO-220FP | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
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