STMicroelectronics STGWA20HP65FB2, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247
- RS Stock No.:
- 204-3946
- Mfr. Part No.:
- STGWA20HP65FB2
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 204-3946
- Mfr. Part No.:
- STGWA20HP65FB2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
- COO (Country of Origin):
- CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient