STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 168-8738
- Mfr. Part No.:
- STGF15H60DF
- Brand:
- STMicroelectronics
Save 14% when you buy 250 units
Subtotal (1 tube of 50 units)*
£47.40
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£56.90
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- Shipping from 05 February 2026
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Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.948 | £47.40 |
100 - 200 | £0.901 | £45.05 |
250 + | £0.811 | £40.55 |
*price indicative
- RS Stock No.:
- 168-8738
- Mfr. Part No.:
- STGF15H60DF
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 30 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 30 W | |
Package Type | TO-220FP | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Switching Speed | 1MHz | |
Transistor Configuration | Single | |
Dimensions | 10.4 x 4.6 x 16.4mm | |
Minimum Operating Temperature | -55 °C | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 30 W | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 16.4mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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