STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

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£6.82

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£8.18

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10 - 40£0.682£6.82
50 - 90£0.663£6.63
100 - 240£0.647£6.47
250 - 490£0.63£6.30
500 +£0.613£6.13

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RS Stock No.:
906-2808
Mfr. Part No.:
STGP5H60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

88 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Maximum Operating Temperature

+175 °C

Energy Rating

221mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

855pF

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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