STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 168-8940
- Mfr. Part No.:
- STGP5H60DF
- Brand:
- STMicroelectronics
Save 19% when you buy 750 units
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£36.90
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£44.30
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- 50 unit(s) shipping from 19 November 2025
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Units | Per unit | Per Tube* |
---|---|---|
50 - 50 | £0.738 | £36.90 |
100 - 200 | £0.701 | £35.05 |
250 - 450 | £0.665 | £33.25 |
500 - 700 | £0.628 | £31.40 |
750 + | £0.591 | £29.55 |
*price indicative
- RS Stock No.:
- 168-8940
- Mfr. Part No.:
- STGP5H60DF
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 10 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 88 W | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 10.4 x 4.6 x 15.75mm | |
Gate Capacitance | 855pF | |
Minimum Operating Temperature | -55 °C | |
Energy Rating | 221mJ | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 88 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 15.75mm | ||
Gate Capacitance 855pF | ||
Minimum Operating Temperature -55 °C | ||
Energy Rating 221mJ | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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