STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal (1 tube of 50 units)*

£36.90

(exc. VAT)

£44.30

(inc. VAT)

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Temporarily out of stock
  • 50 unit(s) shipping from 19 November 2025
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Units
Per unit
Per Tube*
50 - 50£0.738£36.90
100 - 200£0.701£35.05
250 - 450£0.665£33.25
500 - 700£0.628£31.40
750 +£0.591£29.55

*price indicative

RS Stock No.:
168-8940
Mfr. Part No.:
STGP5H60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

88 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

855pF

Energy Rating

221mJ

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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