Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 168-7767
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
Available to back order for despatch 07/10/2024
Added
Price Each (In a Tube of 25)
£3.647
(exc. VAT)
£4.376
(inc. VAT)
| Units | Per unit | Per Tube* |
| 25 + | £3.647 | £91.175 |
| *price indicative | ||
- RS Stock No.:
- 168-7767
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |
- RS Stock No.:
- 168-7767
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
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