STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP

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Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type ISOTOP
Mounting Type Panel Mount
Channel Type N
Pin Count 4
Transistor Configuration Single
Dimensions 38.2 x 25.5 x 9.1mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
70 In stock - FREE next working day delivery available
Price Each (In a Tube of 10)
£ 18.513
(exc. VAT)
£ 22.216
(inc. VAT)
Units
Per unit
Per Tube*
10 +
£18.513
£185.13
*price indicative
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The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and ...