IXYS IXXK100N60C3H1 IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

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Subtotal (1 tube of 25 units)*

£365.975

(exc. VAT)

£439.175

(inc. VAT)

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25 +£14.639£365.98

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RS Stock No.:
168-4587
Mfr. Part No.:
IXXK100N60C3H1
Brand:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

695 W

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

20 → 60kHz

Transistor Configuration

Single

Dimensions

20.3 x 5.3 x 26.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Energy Rating

600mJ

COO (Country of Origin):
PH

IGBT Discretes, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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