IXYS IXXK100N60C3H1, Type N-Channel IGBT, 100 A 600 V, 3-Pin TO-264, Through Hole

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RS Stock No.:
125-8050
Distrelec Article No.:
302-53-438
Mfr. Part No.:
IXXK100N60C3H1
Brand:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current Ic

100A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

695W

Package Type

TO-264

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

60kHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

Planar

Standards/Approvals

No

Energy Rating

600mJ

Automotive Standard

No

COO (Country of Origin):
PH

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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