IXYS, Type N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin TO-264, Through Hole
- RS Stock No.:
- 168-4782
- Mfr. Part No.:
- IXYK100N120C3
- Brand:
- IXYS
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 168-4782
- Mfr. Part No.:
- IXYK100N120C3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | high Speed IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1150W | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.32mm | |
| Series | GenX3TM | |
| Standards/Approvals | International Standard Packages | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type high Speed IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1150W | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.32mm | ||
Series GenX3TM | ||
Standards/Approvals International Standard Packages | ||
Width 16.13 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- IXYS IXYK100N120C3 IGBT 3-Pin TO-264, Through Hole
- IXYS IXYX100N120C3 IGBT 3-Pin PLUS247, Through Hole
- IXYS IXXK110N65B4H1 IGBT 3-Pin TO-264, Through Hole
- IXYS IXXK100N60C3H1 IGBT 3-Pin TO-264, Through Hole
- IXYS IXYH30N120C3D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXYH40N120C3D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXGH40N120B2D1 IGBT 3-Pin TO-247, Through Hole
- IXYS IXA37IF1200HJ IGBT 3-Pin ISOPLUS247, Through Hole