onsemi NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

£89.61

(exc. VAT)

£107.52

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 30 unit(s) shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 90£2.987£89.61
120 - 240£2.381£71.43
270 - 480£2.255£67.65
510 - 990£2.133£63.99
1020 +£1.886£56.58

*price indicative

RS Stock No.:
163-0258
Mfr. Part No.:
NGTB35N65FL2WG
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

70 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

300 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links