onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 145-3469
- Mfr. Part No.:
- NGTB40N65FL2WG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
£98.58
(exc. VAT)
£118.29
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 - 90 | £3.286 | £98.58 |
120 - 240 | £2.636 | £79.08 |
270 - 480 | £2.49 | £74.70 |
510 + | £2.336 | £70.08 |
*price indicative
- RS Stock No.:
- 145-3469
- Mfr. Part No.:
- NGTB40N65FL2WG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Maximum Continuous Collector Current | 80 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 366 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Switching Speed | 1MHz | |
Transistor Configuration | Single | |
Dimensions | 16.26 x 5.3 x 21.08mm | |
Minimum Operating Temperature | -55 °C | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 366 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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