- RS Stock No.:
- 145-3284
- Mfr. Part No.:
- NGTB25N120FL3WG
- Brand:
- onsemi
60 In stock - FREE next working day delivery available
Added
Price Each (In a Tube of 30)
£3.62
(exc. VAT)
£4.34
(inc. VAT)
Units | Per unit | Per Tube* |
30 - 90 | £3.62 | £108.60 |
120 - 240 | £2.896 | £86.88 |
270 - 480 | £2.737 | £82.11 |
510 - 990 | £2.626 | £78.78 |
1020 + | £2.56 | £76.80 |
*price indicative |
- RS Stock No.:
- 145-3284
- Mfr. Part No.:
- NGTB25N120FL3WG
- Brand:
- onsemi
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 349 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 16.25 x 5.3 x 21.4mm |
Gate Capacitance | 3085pF |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |
- RS Stock No.:
- 145-3284
- Mfr. Part No.:
- NGTB25N120FL3WG
- Brand:
- onsemi
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