onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

£104.13

(exc. VAT)

£124.95

(inc. VAT)

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Temporarily out of stock
  • 30 unit(s) shipping from 17 December 2025
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Units
Per unit
Per Tube*
30 - 90£3.471£104.13
120 - 240£2.777£83.31
270 - 480£2.624£78.72
510 - 990£2.518£75.54
1020 +£2.455£73.65

*price indicative

RS Stock No.:
145-3284
Mfr. Part No.:
NGTB25N120FL3WG
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Gate Capacitance

3085pF

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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