onsemi FGH40N60SFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

£67.05

(exc. VAT)

£80.46

(inc. VAT)

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  • 150 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 30£2.235£67.05
60 - 120£2.168£65.04
150 - 270£2.101£63.03
300 +£2.011£60.33

*price indicative

RS Stock No.:
124-1334
Mfr. Part No.:
FGH40N60SFDTU
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

290 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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