STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount

Bulk discount available

Subtotal (1 unit)*

£2.49

(exc. VAT)

£2.99

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,980 unit(s) ready to ship
  • Plus 999,998,019 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£2.49
10 - 99£2.25
100 - 499£2.07
500 - 999£1.92
1000 +£1.72

*price indicative

Packaging Options:
RS Stock No.:
330-362
Mfr. Part No.:
GH50H65DRB2-7AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

108 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

385 W

Package Type

H2PAK-7

Mounting Type

Surface Mount

Pin Count

7

COO (Country of Origin):
CN
The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

AEC-Q101 qualified
Maximum junction temperature TJ equal to 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Co-packed with high ruggedness rectifier diode
Excellent switching performance thanks to the extra driving kelvin pin

Related links