Infineon 256 kB FRAM 28-Pin SOIC-28, FM18W08-SGTR
- RS Stock No.:
- 273-5303
- Mfr. Part No.:
- FM18W08-SGTR
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£8,943.00
(exc. VAT)
£10,732.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £8.943 | £8,943.00 |
*price indicative
- RS Stock No.:
- 273-5303
- Mfr. Part No.:
- FM18W08-SGTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32k x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mount Type | Surface | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 32k | |
| Number of Bits per Word | 8 | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32k x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mount Type Surface | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 32k | ||
Number of Bits per Word 8 | ||
Automotive Standard No | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM Memory is a 32 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
Related links
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