The Infineon FRAM Memory is a 256 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.

RoHS compliant
Low power consumption
Supports SPI mode 0 and mode 3
Very fast serial peripheral interface
Sophisticated write protection scheme