Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- RS Stock No.:
- 273-7388
- Mfr. Part No.:
- FM25V02A-G
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 97 units)*
£408.37
(exc. VAT)
£489.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 873 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | £4.21 | £408.37 |
| 194 + | £3.751 | £363.85 |
*price indicative
- RS Stock No.:
- 273-7388
- Mfr. Part No.:
- FM25V02A-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Serial (SPI) F-RAM | |
| Memory Size | 256kB | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Number of Words | 32k | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Serial (SPI) F-RAM | ||
Memory Size 256kB | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Number of Words 32k | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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