Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-G
- RS Stock No.:
- 273-7385
- Mfr. Part No.:
- FM25C160B-G
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.56
(exc. VAT)
£4.28
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,888 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £1.78 | £3.56 |
10 - 18 | £1.565 | £3.13 |
20 - 48 | £1.535 | £3.07 |
50 - 98 | £1.505 | £3.01 |
100 + | £1.365 | £2.73 |
*price indicative
- RS Stock No.:
- 273-7385
- Mfr. Part No.:
- FM25C160B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 16kbit | |
Organisation | 2K x 8 | |
Interface Type | Serial-SPI | |
Data Bus Width | 8bit | |
Package Type | SOIC | |
Pin Count | 8 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Package Type SOIC | ||
Pin Count 8 | ||
- COO (Country of Origin):
- TH
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
AEC Q100 Grade 1 compliant
Very fast serial peripheral interface
Sophisticated write protection scheme
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
Low power consumption
AEC Q100 Grade 1 compliant
Very fast serial peripheral interface
Sophisticated write protection scheme
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
Related links
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