Infineon 16kbit SPI FRAM Memory 8-Pin SOIC, FM25L16B-G
- RS Stock No.:
- 188-5416
- Mfr. Part No.:
- FM25L16B-G
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 97 units)*
£109.707
(exc. VAT)
£131.629
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 485 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | £1.131 | £109.71 |
| 194 - 485 | £1.016 | £98.55 |
| 582 - 970 | £0.989 | £95.93 |
| 1067 + | £0.961 | £93.22 |
*price indicative
- RS Stock No.:
- 188-5416
- Mfr. Part No.:
- FM25L16B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Number of Words | 2k | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Number of Words 2k | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 16kbit SPI FRAM Memory 8-Pin SOIC, FM25L16B-G
- Infineon 16kbit SPI FRAM Memory 8-Pin SOIC, FM25L16B-GTR
- Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-G
- Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-GTR
- Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, CY15B016Q-SXET
- Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, CY15B016Q-SXE
- Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- Infineon 64kbit SPI FRAM Memory 8-Pin SOIC, FM25640B-G
