Infineon 64kbit SPI FRAM Memory 8-Pin SOIC, FM25CL64B-G
- RS Stock No.:
- 188-5413
- Mfr. Part No.:
- FM25CL64B-G
- Brand:
- Infineon
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Subtotal (1 tube of 97 units)*
£225.428
(exc. VAT)
£270.533
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,328 unit(s) shipping from 10 November 2025
- Plus 999,997,638 unit(s) shipping from 16 November 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | £2.324 | £225.43 |
| 194 - 485 | £2.087 | £202.44 |
| 582 - 970 | £1.998 | £193.81 |
| 1067 + | £1.889 | £183.23 |
*price indicative
- RS Stock No.:
- 188-5413
- Mfr. Part No.:
- FM25CL64B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.65 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Number of Words | 8k | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.65 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Number of Words 8k | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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