64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K x 8
High-endurance 10 trillion (1013) read/writes
121-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 16 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
300 A active current at 1 MHz
6 A (typ) standby current at +85 C
Low-voltage operation: VDD = 3.0 V to 3.6 V
Automotive-E temperature: –40 C to +125 C
8-pin small outline integrated circuit (SOIC) package