Infineon 16kbit SPI FRAM Memory 8-Pin SOIC, FM25L16B-G

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£6.00

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£7.20

(inc. VAT)

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5 - 10£1.20£6.00
15 - 25£0.924£4.62
30 - 95£0.89£4.45
100 - 495£0.792£3.96
500 +£0.77£3.85

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Packaging Options:
RS Stock No.:
125-4226
Mfr. Part No.:
FM25L16B-G
Brand:
Infineon
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Brand

Infineon

Memory Size

16kbit

Organisation

2K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.48mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Number of Words

2K

Minimum Operating Supply Voltage

2.7 V

Minimum Operating Temperature

-40 °C

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
200 μA active current at 1 MHz
3 μA (typ) standby current
Low-voltage operation: VDD = 2.7 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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